Metal Organic Chemical Vapor Deposition (MOCVD) Facility
This $1.75M capital equipment project is for the design and implementation of III-V material growth system using Metal Organic Chemical Vapor Deposition (MOCVD). The equipment, facility upgrades and personnel support for this project is funded in part by the National Science Foundation (NSF), Empire State Development (NYS), the Department of Defense, NASA and the Rochester Institute of Technology (RIT), VP of Research (https://www.rit.edu/research/about-us/vice-president-research ) and the RIT-Kate Gleason College of Engineering (https://www.rit.edu/kgcoe/ ). The system is being installed in the Semiconductor and Mircrosystems Fabrication Laboratory (http://www.smfl.rit.edu/ (SMFL), with an expected completion date of September 2015.
The system will be devoted to the growth of III-V nanostructured materials and devices. The MOCVD has been proven to provide the variety of materials, thickness, composition, and doping control necessary for the various nanomaterials and nanostructures. Current programs that utilize the MOCVD include the development of InAs quantum dots for high efficiency solar cells, III-V materials integrated with silicon based nanophotonics, next generation imaging array detectors and nanostructured 111-V devices for radioisotope micro-batteries for health and security related microsystems. Adding on-site III-V growth capability will complement RIT’s outstanding processing and characterization facilities and will provide our students with state-of-the-art tools to excel in their chosen fields of study. (NSF)
The materials grown by MOCVD have led to spectacular technological advancements in the last 25 years, including the lasers and photo-detectors that power the backbone of the internet and other long distance communication systems, transistors used to send and receive signals in our mobile communication devices, high luminous efficiency white lightening, high storage density, optical disks and some of the highest efficiency solar cells ever created. The MOCVD system will be part of RIT’s state-of-the-art clean room user facility and will provide essential resources and new capabilities in multiple nanotechnology applications for our regional academic and industrial partners. Only 1 other university in the US has the type of MOCVD capability, thus putting RIT in an elite category for research and development of new materials. (NYS)
Applications for MOCVD use include high-efficiency nanostructured photovoltaics, radioisotope power generation, III-V on Si photovoltaics and Optoelectronics, and long wavelength infrared detectors. These applications require additional monitoring equipment. The LayTec EpiCurveTT measures materials reflectivity, composition and stain in-situ during MOCVD growth and a Nanometrics RPM Blue photoluminescence mapping tool and Electrochemical Capacitance Voltage Profiler to correlate ex-situ the materials bandgap, alloy composition, doping and defect profiles. This combined toolset, when used with the new RIT MOCVD facility, will give unprecedented characterization capability to rapidly develop the new materials and devices that are of interest to sponsor agencies. This equipment will provide for unmatched uniformity, control and materials utilization efficiency. (DoD)
Photovoltaics is at the forefront of a large push in the energy sector towards increasing efficiency. In the space community, the benefits from high efficiency photovoltaic technologies include increased mass specific power, reduced payload volume and potential for higher radiation missions. In order to realize these objectives, the efficiency of photovoltaic devices must increase through improving the current state-of-the-art technologies or by investigating novel approaches. Various epitaxial growth techniques have been investigated to increase the power generated from photovoltaics, while many of these techniques make use of nanostructures that enable quantum confinement and bandgap engineering. With the use of nanostructures that enable quantum confinement, it is possible to absorb efficiently at multiple energy levels. Various techniques are currently being pursued to achieve high efficiency quantum confined solar cells, of which the nipi doping superlattice solar cells, quantum dot bandgap engineered or intermediate band solar cells are a few. The objective of this research is to pursue to use of quantom dots within a doping superlattice to potentially realize an intermediate band solar cell. (NASA)