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OMVPE of InAs Quantum Dots on an InGaP Surface

Forbes, D. V., et al.
Materials Science in Semiconductor Processing, Volume 16, August 2013, pp 1148-1153

The organometallic vapor phase epitaxy of Ijournal 3nAs quantum dots has been investigated by comparing the effect the underlying surface has on the quantum dot physical characteristics. Atomic force microscopy measurements were used to identify the InAs QDs coalesce to significantly larger size when deposited on an InGaP surface compared to a GaAs surface. Quantitative assessment of the total QD volume on different surfaces such as GaAs, InGaP, and GaAsP implicates the role of indium in the underlying surface for the increase in QD size on InGaP surfaces.